Silicon NPN Transistor - Toshiba Semiconductor
Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4207
Audio Frequency General Purpose Amplifier Applications
2SC4207
Unit: mm
Small package (dual type) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 120 to 700 Excellent hFE linearity: hFE (IC = 0.
1 mA)/hFE (IC = 2 mA) = 0.
95 (typ.
) Complementary to 2SA1618
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
Junction temperature
Storage temperature range
VCBO
60
V
VCEO
50
V
VEBO
5
V
IC
150
mA
IB
30
mA
PC
300
mW
(Note 3)
Tj (Note 1)
150
°C
Tj (Note 2)
125
Tstg (Note 1)
55 to 150
°C
Tstg (Note 2)
55 to 125
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 0.
014 g (typ.
)
Note:
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: For devices with the ordering part number ending in LF(T.
Note 2: For devices with the ordering part number in other than LF(T.
Note 3: Total rating
Marking
Equivalent Circuit (top view)
© 2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1987-05
2021-06-25
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
2SC4207
Characteristics
Symbol
Test Condition
Min Typ.
Max Unit
Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitte...
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