N-Channel MOSFET - Advanced Power Electronics
Description
AP10N70I-A-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
650V 0.
62Ω 10A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
G D S
TO-220CFM(I)
Absolute Maximum Ratings
www.
DataSheet.
co.
kr
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 650 ± 30 10 6.
8 40 31.
3
2
Units V V A A A W mJ ℃ ℃
Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
50 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Unit ℃/W ℃/W 1 201204201
Datasheet pdf - http://www.
DataSheet4U.
net/
Data & specifications subject to change without notice
AP10N70I-A-HF
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
3 3
o
Test Conditions VGS=0V, ID=1.
0mA VGS=10V, ID=5.
0A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=480V, VGS=0V VGS=+30V, VDS=0V ID=10A VDS=480V VGS=10V VDD=300V ID=10A RG=10Ω,VGS=10V RD=30Ω VGS=0V VDS=15V f=1.
0MHz f=1.
0MHz
www.
DataSheet.
co.
kr
Min.
650 2 -
Typ.
16 36 8.
3 11.
5 15 20 52 23 630 20 2
Max.
Units 0.
62 4 25 ±100 58 3 V Ω V S uA nA ...
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