4.5V Drive Nch MOSFET - Rohm
Description
Data Sheet
4.
5V Drive Nch MOSFET
RMW200N03
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
PSOP8
0.
5 5.
0 6.
0
(8)
(7)
(6)
(5)
Features 1) High Power package(PSOP8).
2) High-speed switching,Low On-resistance.
3) Low voltage drive(4.
5V drive).
0~0.
1
0.
5
1pin mark
(1) (2)
(3)
(4) 0.
4
0.
22 0.
9
1.
27
5.
0
Application Switching
Packaging specifications Package Code Basic ordering unit (pieces) RMW200N03 Type Taping TB 2500
Inner circuit
(8) (7) (6) (5)
Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 MOUNTED ON 40mm×40mm Cu BOARD
Symbol VDSS VGSS
Limits 30 20 20
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Unit V V A A A A W C C
(1) (2) (3) (4) (5) (6) (7) (8)
Source Source Source Gate Drain Drain Drain Drain
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Continuous Pulsed Continuous Pulsed
ID IDP IS ISP PD Tch Tstg
*1
80 2.
5 80 3.
0 150 55 to 150
*1 *2
Thermal resistance Parameter Channel to Ambient
* MOUNTED ON 40mm×40mm Cu BOARD
Symbol Rth (ch-a)*
Limits 41.
7
Unit C / W
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All rights reserved.
1/6
2011.
03 - Rev.
A
Datasheet pdf - http://www.
DataSheet4U.
net/
RMW200N03
Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
*Pulsed
Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * Min.
30 1.
0 20 Typ.
3.
0 4.
0 1780 580 210 18 50 60 20 29 5.
7 5.
5 Max.
10 1 2.
5 4.
2 5.
6 Unit A V A V m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V,...
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