■ 9A,900V, RDS(on)(Max1.35Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 58nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mode power field effect transisto...
WFW9N90W PDF File
