Silicon NPN Transistor - Sanken electric
Description
LOW VCE (sat)
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4064 50 50 6 12 3 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2SC4064
Application : DC Motor Driver and General Purpose
(Ta=25°C) 2SC4064 100max 10max 50min 50min 0.
35max 40typ 180typ V MHz pF
13.
0min
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567) sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=50V VEB=6V IC=25mA VCE=1V, IC=6A IC=6A, IB=0.
3A VCE=12V, IE=–0.
5A VCB=12V, f=1MHz
External Dimensions FM20(TO220F)
4.
0±0.
2 10.
1±0.
2 4.
2±0.
2 2.
8 c0.
5
Unit
µA
V
16.
9±0.
3 8.
4±0.
2
µA
1.
35±0.
15 1.
35±0.
15 0.
85 +0.
2 -0.
1 0.
45 +0.
2 -0.
1 2.
54 2.
2±0.
2 2.
4±0.
2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 24 RL (Ω) 4 IC (A) 6 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.
12 IB2 (A) –0.
12 ton (µs) 0.
6typ tstg (µs) 1.
4typ tf (µs) 0.
4typ
2.
54
3.
9 B C E
I C – V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V ) 12
V CE ( sat ) – I B Characteristics (Typical)
1.
3
I C – V BE Temperature Characteristics (Typical)
12 (V CE =1V)
20
m
100m A
A
10
60mA
10 1.
0 Collector Current I C (A)
Collector Current I C (A)
8
40mA
8
p) se ˚C (Ca Tem
25˚C
20mA
0.
5
12A
10mA
2
I B =5mA
9A
I C= 1 A
3A
6A
2
0
0
0.
8
1.
6
2.
4
3.
2
4
4.
8
5.
6 6
0 0.
002
0.
01
0.
1 Base Current I B (A)
1
3
0
0
–30˚C
125
(Cas
4
4
e Te mp) (Case Temp )
6
6
±0.
2
0.
8±0.
2
a b
ø3.
3±0.
2
Weight : Approx 2.
0g a.
Type No.
b.
Lot No.
0.
5 Base-Emittor Voltage V B E (V)
1.
0 1.
1
Collector-Emitter Voltage V C E (V)
h FE – I C Characteristics (Typical)
(V C E =1V) 1000 DC Cur rent Gain h FE 500
h FE – I C Temperature Characteristics (Typical)
(V C E =1V) 1000
θ j - a (˚C /W)
Transient Thermal Resistance
θ j-a – t Characteristics
5
125˚C
Typ
DC Cur rent Gain h FE 500
25˚C
–3 0˚C
100 50
100 50
1
0.
5 0.
3
20 0.
02
0.
1
1 Collector Current I C (A)
10 12
20 0.
02
0.
1
1 Collector Current I C (A)
...
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