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2SC3979A

Panasonic Semiconductor
Part Number 2SC3979A
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For hig...
Datasheet PDF File 2SC3979A PDF File

2SC3979A
2SC3979A


Overview
Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type 4.
2±0.
2 16.
7±0.
3 7.
5±0.
2 0.
7±0.
1 For high breakdown voltage high-speed switching ■ Features 10.
0±0.
2 5.
5±0.
2 Unit: mm 4.
2±0.
2 2.
7±0.
2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.
1±0.
1 • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 1.
4±0.
1 1.
3±0.
2 / ■ Absolute Maximum Ratings TC = 25°C 14.
0±0.
5 Solder Dip (4.
0) 0.
8±0.
1 0.
5+–00.
.
12 Parameter Symbol Rating Unit e e) Collector-base voltage 2SC3979 VCBO 900 V c typ (Emitter open) 2SC3979A 1 000 n d stage.
tinued Collector-emitter voltage 2SC3979 VCES 900 V le on (E-B short) 2SC3979A 1 000 a elifecyc disc Collector-emitter voltage (Base open) VCEO 800 V n u ct ped, Emitter-base voltage (Collector open) VEBO 7 V rodu d ty Base current IB 1 A te tin ur P tinue Collector current IC 3 A g fo con Peak collector current ICP 5 A in n llowin d dis Collector power PC 40 W s fo lane dissipation Ta = 25°C 2.
0 a o lude e, p Junction temperature Tj 150 °C inc typ Storage temperature Tstg −55 to +150 °C M isccontinueindtenance ■ Electrical Characteristics TC = 25°C ± 3°C /Dis ma Parameter Symbol Conditions D ance type, Collector-emitter voltage (Base open) ten ce Collector-base cut-off current 2SC3979 Main tenan (Emitter open) 2SC3979A ain Emitter-base cutoff current (Collector open) (planed m Forward current transfer ratio VCEO ICBO IEBO hFE1 hFE2 IC = 10 mA, IB = 0 VCB = 900 V, IE = 0 VCB = 1 000 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 0.
1 A VCE = 5 V, IC = 0.
8 A 2.
54±0.
3 5.
08±0.
5 123 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package Min Typ Max Unit 800 V 50 µA 50 50 µA 8  6 Collector-emitter saturation voltage VCE(sat) IC = 0.
8 A, IB = 0.
16 A 1.
5 V Base-emitter saturation voltage VBE(sat) IC = 0.
8...


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