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2SC3789

Sanyo Semicon Device
Part Number 2SC3789
Manufacturer Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Published Mar 22, 2005
Detailed Description Ordering number:EN2093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1479/2SC3789 High-Definiton CRT Display Video Ou...
Datasheet PDF File 2SC3789 PDF File

2SC3789
2SC3789


Overview
Ordering number:EN2093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1479/2SC3789 High-Definiton CRT Display Video Output Applications Applications · High-definition CRT display.
· Color TV chroma output, high breakdown voltage drivers.
Package Dimensions unit:mm 2042A [2SA1479/2SC3789] Features · High breakdown voltage (VCEO≥300V).
· Excellent high frequency characteristic : Cre=1.
8pF (typ).
· Adoption of MBIT process.
· No insulator required for mounting, which contrib- utes to reducing the cost and the number of manufacturing processes.
· Plastic-covered heat sink facilitating high-density mounting.
· Directly interchange able with TO-126 because the package is designed based on the conventional package dimensions.
B : Base C : Collector E : Emitter SANYO : TO-126ML ( ) : 2SA1479 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Ratings (–)300 (–)300 (–)5 (–)100 (–)200 1.
5 7 150 –55 to +150 Unit V V V mA mA W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Output Capacitance Reverse Transfer Capacitance Symbol Conditions ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob VCB=(–)200V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)30V, IC=(–)10mA IC=(–)20mA, IB=(–)2mA IC=(–)20mA, IB=(–)2mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 VCB=(–)30V, f=1MHz Cre VCB=(–)30V, f=1MHz Ratings min typ 40* 70 (–)300 (–)300 (–)5 2.
6 (3.
1) 1.
8 (2.
3) max (–)0.
1 (–)0.
1 320* (–)0.
6 (–)1.
0 Unit µA µA MHz V...


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