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2SC3788

Sanyo Semicon Device
Part Number 2SC3788
Manufacturer Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Published Mar 22, 2005
Detailed Description Ordering number:EN2253A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1478/2SC3788 High-Definition CRT Display Video ...
Datasheet PDF File 2SC3788 PDF File

2SC3788
2SC3788


Overview
Ordering number:EN2253A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1478/2SC3788 High-Definition CRT Display Video Output Applications Features · High breakdown voltage : VCEO≥200V.
· Small reverse transfer capacitance and excellent high frequency cahaceteristic : Cre=1.
2pF (NPN), 1.
7pF (PNP).
· Adoption of FBET process.
Package Dimensions unit:mm 2042A [2SA1478/2SC3788] ( ) : 2SA1478 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE fT Cob VCB=(–)150V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)30V, IC=(–)10mA VCB=(–)30V, f=1MHz Reverse Transfer Capacitance Cre VCB=(–)30V, f=1MHz Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)20mA, IB=(–)2mA IC=(–)20mA, IB=(–)2mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 * : The 2SA1478/2SC3788 are classified by 10mA hFE as follows: 40 C 80 60 D 120 100 E 200 160 F 320 B : Base C : Collector E : Emitter SANYO : TO-126ML Ratings (–)200 (–)200 (–)5 (–)100 (–)200 1.
3 5 150 –55 to +150 Unit V V V mA mA W W ˚C ˚C Ratings min typ 40* 150 1.
7 (2.
6) 1.
2 (1.
7) (–)200 (–)200 (–)5 max (–)0.
1 (–)0.
1 320* (–)0.
6 (–)1.
0 Unit µA µA MHz pF pF pF pF V V V V V SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71598HA (KT)/3247TA, TS No.
2253-1/4 2SA1478/2SC3788 No.
2253-2/4 2SA1478/2SC3788 No...


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