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2SC3668

Part Number	2SC3668
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Epitaxial Type TRANSISTOR
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3668 Power Amplifier Applications Power Switching Applica...
Datasheet	2SC3668 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3668 Power Amplifier Applications Power Switching Applications 2SC3668 Unit: mm • Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW • High-speed switching: tstg = 1.
0 μ (typ.
) • Complementary to 2SA1428.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.
5 A JEDEC ― Collector power dissipation Junction temperature Storage temperature range PC 1000 mW Tj 150 °C Tstg −55 to 150 °C JEITA...

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