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2SC3587

Part Number	2SC3587
Manufacturer	NEC
Description	NPN EPITAXIAL SILICON TRANSISTOR
Published	Mar 22, 2005
Detailed Description	DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3...
Datasheet	2SC3587 PDF File

Overview

DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.
5 to 6.
0 GHz.
This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.
PACKAGE DIMENSIONS (in mm) E 3.
8 MIN.
FEATURES • Low noise : NF = 1.
7 dB TYP.
@ f = 2 GHz C 3.
8 MIN.
3.
8 MIN.
B NF = 2.
6 dB TYP.
@ f = 4 GHz • High power gain : GA = 12.
5 dB TYP.
@ f = 2 GHz GA = 8.
0 dB TYP.
@ f = 4 GHz 3.
8 MIN.
45 ° ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Volt...

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