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2SC3583

NEC
Part Number 2SC3583
Manufacturer NEC
Description NPN Silicon Transistor
Published Mar 22, 2005
Detailed Description DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCR...
Datasheet PDF File 2SC3583 PDF File

2SC3583
2SC3583

Overview
DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.
This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique.
PACKAGE DIMENSIONS (Units: mm) 2.
8±0.
2 0.
4 −0.
05 +0.
1 1.
5 0.
65 −0.
15 +0.
1 0.
95 0.
95 FEATURES • NF • Ga 1.
2 dB TYP.
13 dB TYP.
@f = 1.
0 GHz @f = 1.
0 GHz 2.
9±0.
2 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 10 1.
5 65 200 150 65 to +150 V V V mA mW C C 0.
3 Marking 1.
1 to 1.
4 PIN CONNECTIONS 1.
Emitter 2.
Base 3.
Collector ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Maximum Available Gain Noise Figure SYMBOL ICBO IEBO hFE * fT Cre ** 50 100 9 0.
35 11 13 15 1.
2 2.
5 0.
9 MIN.
TYP.
MAX.
1.
0 1.
0 250 GHz pF dB dB dB UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IE = 0 VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.
0 MHz VCE = 8 V, IC = 20 mA, f = 1.
0 GHz VCE = 8 V, IC = 20 mA, f = 1.
0 GHz VCE = 8 V, IE = 7 mA, f = 1.
0 GHz A A S21e2 MAG NF * Pulse Measurement PW  350 s, Duty Cycle  2 % ** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification Class Marking hFE R33/Q * R33 50 to 100 R34/R * R34 80 to 160 R35/S * R35 125 to 250 * Old Specification / New Specification Document No.
P10360EJ4V1DS00 (4th edition) Date Pub...


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