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2SC3419

Part Number	2SC3419
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. 2SC3419 Unit: ...
Datasheet	2SC3419 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications.
2SC3419 Unit: mm • Low saturation voltage: VCE (sat) = 0.
25 V (typ.
) (IC = 500 mA, IB = 50 mA) • High collector power dissipation: PC = 1.
2 W (Ta = 25°C) • Complementary to 2SA1356 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage VCBO 40 V VCEO 40 V Emitter-base voltage Collector current Base current VEBO IC IB 5V 800 mA 80 mA Collector power dissipation Ta = 25°C Tc = 25°C PC 1.
2 W 5 JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-8H1A No...

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