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CEH2310

CET
Part Number CEH2310
Manufacturer CET
Description N-Channel Enhancement Mode Field Effect Transistor
Published Mar 5, 2012
Detailed Description www.DataSheet.co.kr CEH2310 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6.2A , RDS(ON) = 33mΩ @VGS...
Datasheet PDF File CEH2310 PDF File

CEH2310
CEH2310

Overview
www.
DataSheet.
co.
kr CEH2310 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6.
2A , RDS(ON) = 33mΩ @VGS = 10V.
RDS(ON) = 38mΩ @VGS = 4.
5V.
RDS(ON) = 55mΩ @VGS = 2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
5 6 3 2 1 TSOP-6 S(4) G(3) 4 D(1,2,5,6,) PRELIMINARY ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±12 6.
2 25 2.
0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter...


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