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2SC3307

Part Number	2SC3307
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3307 2SC3307 High-Speed and High-Voltage Switching Applications...
Datasheet	2SC3307 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3307 2SC3307 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications Industrial Applications Unit: mm • Excellent switching times: tr = 1.
0 μs (max), tf = 1.
0 μs (max) (IC = 5 A) • High collector breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 900 800 7 10 15 3 150 15...

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