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2SC3267

Toshiba Semiconductor
Part Number 2SC3267
Manufacturer Toshiba Semiconductor
Description Silicon NPN TRANSISTOR
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Power Switching Applica...
Datasheet PDF File 2SC3267 PDF File

2SC3267
2SC3267

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Power Switching Applications 2SC3267 Unit: mm · Low saturation voltage: VCE (sat) = 0.
5 V (max) @IC = 2 A · Complementary to 2SA1297 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 20 6 2 0.
5 400 150 -55~150 Unit V V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 20 V, IE = 0 IEBO VEB = 6 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 V (BR) EBO IE = 0.
1 mA, IC = 0 hFE (...


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