Silicon NPN Transistor - Sanken electric
Description
LAPT
2SC3264
Application : Audio and General Purpose
(Ta=25°C) 2SC3264 100max 100max 230min 50min∗ 2.
0max 60typ 250typ V MHz pF
20.
0min 4.
0max
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3264 230 230 5 17 5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=230V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.
5A VCE=12V, IE=–2A VCB=10V, f=1MHz
External Dimensions MT-200
36.
4±0.
3 24.
4±0.
2 2-ø3.
2±0.
1 9 7 21.
4±0.
3 2.
1 6.
0±0.
2
Unit
µA µA
V
a b
2 3 1.
05 +0.
2 -0.
1 5.
45±0.
1 B C E 5.
45±0.
1 0.
65 +0.
2 -0.
1 3.
0 +0.
3 -0.
1
∗hFE Rank O(50 to 100), Y(70 to 140)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.
5 IB2 (A) –0.
5 ton (µs) 0.
30typ tstg (µs) 2.
40typ tf (µs) 0.
50typ
Weight : Approx 18.
4g a.
Type No.
b.
Lot No.
I C – V CE Characteristics (Typical)
3 A .
0
0 2.
A
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V ) 3
I C – V BE Temperature Characteristics (Typical)
(V CE =4V) 17 15
17
A 1.
5
1.
0
60
15
A
0mA
Collector Current I C (A)
400m
10
A
2
Collector Current I C (A)
200m
A
10
p) em
10 0m A
˚C (
50mA
I B =20mA
0
5A 0 0
0
1
2
3
4
0
0.
5
1.
0
1.
5
2.
0
0
25˚C
–30˚C
125
1
(Cas
5
I C =10A
5
Cas
1
e Te
eT
mp)
2
3
Collector-Emitter Voltage V C E (V)
Base Current I B (A)
Base-Emittor Voltage V B E (V)
(V C E =4V) 200 DC Curr ent Gain h FE DC Curr ent Gain h FE 200 125˚C 100 100 50
(V C E =4V)
θ j- a ( ˚ C/ W)
h FE – I C Characteristics (Typical)
h FE – I C Temperature Characteristics (Typical)
θ j-a – t Characteristics
3
Typ
50
25˚C –30˚C
Transient Thermal Resistance
1 0.
5
10 10 0.
02 0.
1 0.
5 1 5 10 17 0.
02 0.
1 0.
5 1 5 10 17
0.
1
1
10
100 Time t(ms)
1000 2000
Collector Current I C (A)
Collector Current I C (A)
f T – ...
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