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2SC3113

Part Number	2SC3113
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 2SC3113 For Audio Amplifier and Switching Applications Unit: mm...
Datasheet	2SC3113 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 2SC3113 For Audio Amplifier and Switching Applications Unit: mm · High DC current gain: hFE = 600~3600 · High breakdown voltage: VCEO = 50 V · High collector current: IC = 150 mA (max) · Small package Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 200 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.
13 g (typ.
) Characterist...

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