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BSC079N10NSG

Infineon Technologies
Part Number BSC079N10NSG
Manufacturer Infineon Technologies
Description OptiMOS2 Power-Transistor
Published Feb 5, 2012
Detailed Description www.DataSheet.co.kr BSC079N10NS G OptiMOS™2 Power-Transistor Features • N-channel, Normal level • Excellent gate charg...
Datasheet PDF File BSC079N10NSG PDF File

BSC079N10NSG
BSC079N10NSG

Overview
www.
DataSheet.
co.
kr BSC079N10NS G OptiMOS™2 Power-Transistor Features • N-channel, Normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID PG-TDSON-8 100 7.
9 100 V mΩ A • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type BSC079N10NS G Package PG-TDSON-8 Marking 079N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R thJA=45 ...


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