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IXFH7N80

IXYS Corporation
Part Number IXFH7N80
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 5, 2012
Detailed Description www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 7 N80...
Datasheet PDF File IXFH7N80 PDF File

IXFH7N80
IXFH7N80

Overview
www.
DataSheet.
co.
kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID (cont) = 7 A RDS(on) = 1.
4 W trr = 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 800 800 ±20 ±30 7 28 7 18 5 180 -55 .
.
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+150 150 -55 .
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+150 V V V V A A A mJ V/ns TO-247 AD (IXFH) (TAB) TO-204 AA (IXFM) D G W °C °C °C °C Nm/lb.
in.
G = Gate, S = Source, D = Dr...


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