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V30100S

Part Number	V30100S
Manufacturer	Vishay
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Published	Feb 2, 2012
Detailed Description	www.vishay.com V30100S, VI30100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra...
Datasheet	V30100S PDF File

Overview

www.
vishay.
com V30100S, VI30100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
39 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI30100S PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max.
Package 30 A 100 V 250 A 0.
69 V 150 °C TO-220AB, TO-262AA Diode variations Single die FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYP...

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