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V20200G

Part Number	V20200G
Manufacturer	Vishay
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published	Feb 2, 2012
Detailed Description	www.DataSheet.co.kr New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Dual High-Voltage...
Datasheet	V20200G PDF File

Overview

www.
DataSheet.
co.
kr New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
62 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS 2 V20200G PIN 1 PIN 3 3 1 VF20200G PIN 1 P...

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