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VB20120SG

Part Number	VB20120SG
Manufacturer	Vishay
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Published	Feb 2, 2012
Detailed Description	www.DataSheet.co.kr New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage ...
Datasheet	VB20120SG PDF File

Overview

www.
DataSheet.
co.
kr New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
54 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V20120SG PIN 1 PIN 2 CASE 3 1 VF20120SG PIN 1 PIN 2 2 3 1 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For...

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