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2SC2881

Part Number	2SC2881
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN TRANSISTOR
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Power Amplifier Appli...
Datasheet	2SC2881 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Power Amplifier Applications 2SC2881 Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.
) • Small flat package • PC = 1.
0 to 2.
0 W (mounted on ceramic substrate) • Complementary to 2SA1201 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg 120 120 5 800 160 500 1000 150 −55 to 150 V V V mA mA mW °C °C PW-MINI JED...

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