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UG30CPT

Vishay Siliconix
Part Number UG30CPT
Manufacturer Vishay Siliconix
Description (UG30APT - UG30DPT) Dual Common-Cathode Ultrafast Plastic Rectifier
Published Feb 2, 2012
Detailed Description www.DataSheet.co.kr UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier ...
Datasheet PDF File UG30CPT PDF File

UG30CPT
UG30CPT


Overview
www.
DataSheet.
co.
kr UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability 3 2 1 • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application.
30 A TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr VF TJ max.
50 V to 200 V 300 A 25 ns 0.
85 V 150 °C MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TC = 120 °C Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode Operating and storage temperature range SYMBOL VRRM VRMS VDC IF(AV) IFSM TJ, TSTG UG30APT 50 35 50 UG30BPT 100 70 100 30 300 - 65 to + 150 UG30CPT 150 105 150 UG30DPT 200 140 200 UNIT V V V A A °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode Maximum DC reverse current at rated DC blocking voltage per diode Document Number: 88762 Revision: 05-Jun-08 15 A 30 A 10 A TEST CONDITIONS SYMBOL VF TJ = 100 °C TA = 25 °C TA = 100 °C IR UG30APT UG30BPT UG30CPT UG30DPT UNIT V 1.
0 1.
15 0.
85 15 800 µA For technical questions within your region, please contact one of the following: PDD-Americas@vishay.
com, PDD-Asia@vishay.
com, PDD-Europe...


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