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TSHG8400

Vishay Siliconix
Part Number TSHG8400
Manufacturer Vishay Siliconix
Description High Speed Infrared Emitting Diode
Published Feb 2, 2012
Detailed Description www.DataSheet.co.kr TSHG8400 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FE...
Datasheet PDF File TSHG8400 PDF File

TSHG8400
TSHG8400

Overview
www.
DataSheet.
co.
kr TSHG8400 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 22° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 8389 DESCRIPTION TSHG8400 is an infrared, 830 nm emitting diode in GaAlAs double heter...


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