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TSHG5510

Vishay Siliconix
Part Number TSHG5510
Manufacturer Vishay Siliconix
Description High Speed Infrared Emitting Diode
Published Feb 2, 2012
Detailed Description www.vishay.com TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 21061 ...
Datasheet PDF File TSHG5510 PDF File

TSHG5510
TSHG5510

Overview
www.
vishay.
com TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 21061 DESCRIPTION TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 830 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 38° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 24 MHz • Good spectral matching to Si photodetectors • Compl...


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