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TSHG5410

Vishay Siliconix
Part Number TSHG5410
Manufacturer Vishay Siliconix
Description High Speed Infrared Emitting Diode
Published Feb 2, 2012
Detailed Description www.DataSheet.co.kr TSHG5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FE...
Datasheet PDF File TSHG5410 PDF File

TSHG5410
TSHG5410

Overview
www.
DataSheet.
co.
kr TSHG5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 18° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 8390 DESCRIPTION TSHG5410 is an infrared, 850 nm emitting diode...


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