SMD Photovoltaic Solar Cell Protection Schottky Rectifier - Vishay Siliconix
Description
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SS15P3S
Vishay General Semiconductor
SMD Photovoltaic Solar Cell Protection Schottky Rectifier
FEATURES
eSMP Series
K
®
• Very low profile - typical height of 1.
1 mm • Ideal for automated placement • Guardring for overvoltage protection • Low forward voltage drop, low power losses
1 2
• High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
TO-277A (SMPC)
K Cathode Anode 1 Anode 2
MECHANICAL DATA PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM EAS VF at IF = 15 A TJ max.
15 A 30 V 280 A 20 mJ 0.
42 V 150 °C
Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current (fig.
1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2.
0 A, TJ = 25 °C Operating junction and storage temperature range Junction temperature in DC forward current without reverse bias, t 1 h
(3)
SYMBOL
SS15P3S 153S
UNIT
VRRM IF IFSM EAS TOP, TSTG TJ
30 15 (1) 4.
5 (2) 280 20 - 55 to + 150 200
V A A mJ °C °C
Notes (1) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink (2) Free air, mounted on recommended copper pad area (3) Meets the requirements of IEC 61215 Ed.
2 bypass diode thermal test
Document Number: 89128 Revision: 13-May-11
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