Silicon NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
Description
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC2644
2SC2644
VHF~UHF Band Wideband Amplifier Applications
Unit: mm
· High gain · Low IMD · fT = 4 GHz (typ.
)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
25 12 3.
0 120 40 0.
5 125 -55~125
Unit
V V V mA mA W °C °C
Microwave Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1E
Weight: 0.
21 g (typ.
)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition
fT ïS21eï2 (1) ïS21eï2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 30 mA VCE = 10 V, IC = 30 mA, f = 0.
5 GHz VCE = 10 V, IC = 30 mA, f = 1 GHz VCE = 10 V, IC = 10 mA, f = 0.
5 GHz VCE = 10 V, IC = 10 mA, f = 1 GHz
Min Typ.
Max Unit
¾ 4.
0 ¾ GHz
¾ 14.
0 ¾ ¾ 8.
5 ¾
dB
¾ 2.
3 ¾ dB
¾ 3.
0 ¾
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ.
Max Unit
Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse transfer capacitance
ICBO
VCB = 10 V, IE = 0
¾ ¾ 1 mA
IEBO
VEB = 1.
0 V, IC = 0
¾ ¾ 10 mA
hFE VCE = 5 V, IC = 50 mA
20 50 ¾
Cob ¾ 1.
6 ¾ pF VCB = 10 V, IE = 0, f = 1 MHz (Note)
Cre ¾ 1.
1 ¾ pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-19
2SC2644
2 2003-03-19
Common Emitter Small S-Parameters of 2SC2644
VCE = 10 V, IC = 30 mA
2SC2644
3 2003-03-19
2SC2644
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe d...
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