Silicon NPN Transistor - Hitachi Semiconductor
Description
2SC2619
Silicon NPN Epitaxial
Application
High frequency amplifier
Outline
MPAK
3 1 2
1.
Emitter 2.
Base 3.
Collector
2SC2619
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 30 5 100 150 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 30 5 — —
1
Typ — — — — — — — — 230 — 5.
0
Max — — — 0.
5 0.
5 200 1.
1 0.
75 — 3.
5 —
Unit V V V µA µA
Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IC = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figure Note: Grade Mark hFE V(BR)EBO I CBO I EBO hFE*
35 — — — — —
VCE(sat) VBE fT Cob NF
V V MHz pF dB
I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 2 mA, f = 1 MHz, Rg = 500 Ω
1.
The 2SC2619 is grouped by h FE as follows.
A FA 35 to 75 B FB 60 to 120 C FC 100 to 200
See characteristic curves of 2SC460.
2
2SC2619
Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 150
100
50
0
50 100 150 Ambient Temperature Ta (°C)
3
Unit: mm
0.
65
0.
10 3 – 0.
4 + – 0.
05
0.
16 – 0.
06
+ 0.
10
1.
5 ± 0.
15
+ 0.
2 – 0.
6
0 – 0.
1
0.
95
0.
95
1.
9 ± 0.
2 2.
95 ± 0.
2
0.
3
+ 0.
2 1.
1 – 0.
1
0.
65
2.
8
Hitachi Code JEDEC EIAJ Weight (reference value)
MPAK — Conforms 0.
011 g
Cautions
1.
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