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PMD1603K

Part Number	PMD1603K
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Darlingtion Power Transistor
Published	Jan 11, 2012
Detailed Description	www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PM...
Datasheet	PMD1603K PDF File

Overview

www.
DataSheet.
co.
kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1603K DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= 100V(Min) ·Complement to type PMD1703K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 100 100 5.
0 20 40 0.
5 180 150 -65~200 UNIT V V V A A A W ℃ ...

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