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PMD1601K

Part Number	PMD1601K
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Darlingtion Power Transistor
Published	Jan 11, 2012
Detailed Description	www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PM...
Datasheet	PMD1601K PDF File

Overview

www.
DataSheet.
co.
kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1601K DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= 60V(Min) ·Complement to type PMD1701K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 60 60 5.
0 20 40 0.
5 180 150 -65~200 UNIT V V V A A A W ℃ ℃ ...

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