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MJ6308

Inchange Semiconductor
Part Number MJ6308
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jan 11, 2012
Detailed Description www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·70...
Datasheet PDF File MJ6308 PDF File

MJ6308
MJ6308

Overview
www.
DataSheet.
co.
kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·700V Collector-Base Breakdown Capability ·Excellent Dynamic Saturation Characteristics ·Fast swithing ·Low Saturation Voltage ·Advanced Technology Replacement for the 2N6308 APPLICATIONS ·Designed in circuits requiring good dynamio saturation characteristics in swithing power supply applications and other inductive swithing circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCES VEBO IC IB B MJ6308 PARAMETER Collector-Base Voltage Collector-Emitter Sustaining Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC...


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