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MJ3773

Part Number	MJ3773
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jan 11, 2012
Detailed Description	www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·Lo...
Datasheet	MJ3773 PDF File

Overview

www.
DataSheet.
co.
kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation VoltageVce(sat)=0.
8V(Max)@Ic=10A ·Low Leakage Icbo=1mA(max)@140V ·High Current-Gain-Bandwidth ProductfT=1MHz(min)@Ic=1A APPLICATIONS ·Designed for power amplifier and switching applications.
·For ultimate circuit performance based on the design requirements.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCBO VEBO IC IB B MJ3773 PARAMETER Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature Range VALUE...

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