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MJ3772

Inchange Semiconductor
Part Number MJ3772
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jan 11, 2012
Detailed Description www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·Lo...
Datasheet PDF File MJ3772 PDF File

MJ3772
MJ3772


Overview
www.
DataSheet.
co.
kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation VoltageVce(sat)=0.
8V(Max)@Ic=10A ·Low Leakage Icbo=1mA(max)@100V ·High Current-Gain-Bandwidth ProductfT=2MHz(min)@Ic=1A APPLICATIONS ·Designed for power amplifier and switching applications.
·For ultimate circuit performance based on the design requirements.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B MJ3772 PARAMETER Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature Range VALUE...



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