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MJ3771

Part Number	MJ3771
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jan 11, 2012
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain ·Wide Area of Safe Operation ·100% avalanche tested ...
Datasheet	MJ3771 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.
5 A PD Total Power Dissipation@TC=25℃ 200 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ...

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