P-Channel Silicon MOSFET - Sanyo Semicon Device
Description
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Ordering number : ENA1656
SCH1334
SANYO Semiconductors
DATA SHEET
SCH1334
Features
• • • •
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance.
High-speed switching.
1.
8V drive.
Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.
8mm) Conditions Ratings --12 ±10 --1.
6 --6.
4 0.
8 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=--1mA, VGS=0V VDS=--12V, VGS=0V VGS=±8V, VDS=0V VDS=--6V, ID=--1mA VDS=--6V, ID=--0.
8A ID=--0.
8A, VGS=--4.
5V ID=--0.
4A, VGS=--2.
5V ID=--0.
1A, VGS=--1.
8V --0.
4 1.
2 2.
1 165 245 370 215 345 560 Ratings min --12 --10 ±10 --1.
3 typ max Unit V μA μA V S mΩ mΩ mΩ
Marking : YK
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Any and all SANYO Semiconductor Co.
,Ltd.
products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.
).
The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.
) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause h...
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