TRANSISTOR - Toshiba Semiconductor
Description
1112SC2120
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2120
Audio Power Amplifier Applications
Unit: mm
• High hFE: hFE (1) = 100~320 • 1 watts amplifier applications.
• Complementary to 2SA950
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
35 30 5 800 160 600 150 −55~150
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 35 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1) VCE = 1 V, IC = 100 mA
(Note)
hFE (2) VCE = 1 V, IC = 700 mA
VCE (sat) IC = 500 mA, IB = 20 mA
VBE VCE = 1 V, IC = 10 mA
fT VCE = 5 V, IC = 10 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 100~200, Y: 160~320
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.
21 g (typ.
)
Min Typ.
Max Unit
0.
1 µA
0.
1 µA
30
V
100 320
35 0.
5 V 0.
5 0.
8 V 120 MHz 13 pF
1 2005-08-02
2222SC2120
2 2005-08-02
3332SC2120
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
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