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2SB967

Part Number	2SB967
Manufacturer	Panasonic Semiconductor
Description	PNP Transistor
Published	Mar 22, 2005
Detailed Description	Power Transistors 2SB967 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification 7.3± 0.1 1.8...
Datasheet	2SB967 PDF File

Overview

Power Transistors 2SB967 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification 7.
3± 0.
1 1.
8± 0.
1 6.
5± 0.
1 5.
3± 0.
1 4.
35± 0.
1 2.
3± 0.
1 0.
5± 0.
1 2.
5± 0.
1 0.
8max q q q Possible to solder the radiation fin directly to printed cicuit board Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.
93±0.
1 1.
0± 0.
1 0.
1± 0.
05 0.
5± 0.
1 0.
75± 0.
1 2.
3± 0.
1 4.
6± 0.
1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1 2 3 (Ta=25˚C) Ratings –27 –18 –7 –8 –5 20 150 –55 to +150 Unit V V V A A W 0.
6 2.
3 2.
3 0.
75 6.
5±0.
2 5.
35 4.
35 1:Base 2:Collector 3:Emitter U Type Package Unit: mm ˚C ˚C 1 2 3 2.
3±0.
1 0.
5±0.
1 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) s Electrical Characteristics Parameter Colle...

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