Power MOSFET - Sanken electric
Description
SANKEN ELECTRIC
DKG1020
Features Low on-state resistance Built-in gate protection diode SMD PKG
Package
TO252
http://www.
sanken-ele.
co.
jp Aug.
2011
Applications DC / DC converter Switching
Internal Equivalent Circuit
(2)
(1)
Key Specifications V(BR)DSS =100V (ID=100uA) R DS(ON)=52 mΩ max.
(VGS=10V, ID=10A) R DS(ON)=59 mΩ max.
(VGS=4.
5V, ID=10A)
(3)
Absolute maximum ratings
Characteristic Drain to Source Voltage
Symbol VDSS
Rating 100
(Ta=25°C) Unit
V
Gate to Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
±20
A
Maximum Power Dissipation Single Pulse Avalanche Energy
PD EAS *1
40 (Tc=25°C)
W
62.
5
mJ
Channel Temperature
Tch
150
°C
Storage Temperature Maximum Drain to Source dv/dt
Tstg dv/dt 1*1
-55 to +150
°C
0.
6
V/ns
Peak diode recovery dv/dt
dv/dt 2*2
5
V/ns
Peak diode recovery di/dt
di/dt*2
100
A/μs
*1 VDD=14V, L=1mH, IL=11A, unclamped, See Fig.
1 *2 IsD=20A, See Fig.
2
The information included herein is believed to be accurate and reliable.
However, SANKEN ELECTRIC CO.
, LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.
,LTD.
Page 1
SANKEN ELECTRIC
http://www.
sanken-ele.
co.
jp
DKG1020
Characteristic Drain to Source breakdown Voltage
Electrical characteristics
Symbol
Test Conditions
V(BR)DSS ID=100μA,VGS=0V
MIN 100
Aug.
2011
Limits TYP
(Ta=25°C) Unit
MAX V
Gate to Source Leakage Current
IGSS
VGS=±20V
±10
μA
Drain to Source Leakage Current
IDSS
VDS=100V, VGS=0V
100
μA
Gate Threshold Voltage
VTH
VDS=10V, ID=1mA
1.
5
2.
0
2.
5
V
Forward Transconductance
Re(yfs) VDS=10V, IDD=10A
9.
0
S
Static Drain to Source On-Resistance
RDS(ON)
ID=10A, VGS=10V ID=10A, VGS=4.
5V
41
52
mΩ
45
59
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VDS=10V VGS=0V f=1MHz
2200
210
pF
110
Turn-On Delay Time Rise Time
Turn-Off Delay Time Fall Time
td(...
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