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2SD2150

Guangdong Kexin Industrial
Part Number 2SD2150
Manufacturer Guangdong Kexin Industrial
Description Low Frequency Transistor
Published Nov 18, 2011
Detailed Description www.DataSheet.co.kr SMD Type Low Frequency Transistor 2SD2150 Transistors SOT-89 4.50 +0.1 -0.1 Unit: mm 1.50 +0.1 -...
Datasheet PDF File 2SD2150 PDF File

2SD2150
2SD2150


Overview
www.
DataSheet.
co.
kr SMD Type Low Frequency Transistor 2SD2150 Transistors SOT-89 4.
50 +0.
1 -0.
1 Unit: mm 1.
50 +0.
1 -0.
1 +0.
1 1.
80-0.
1 Features +0.
1 2.
50-0.
1 Low VCE(sat).
Excellent DC current gain characteristics.
NPN silicon transistor.
+0.
1 0.
48-0.
1 1 2 3 +0.
1 0.
80-0.
1 +0.
1 0.
53-0.
1 +0.
1 0.
44-0.
1 2.
60 +0.
1 -0.
1 +0.
1 4.
00-0.
1 +0.
1 3.
00-0.
1 0.
40 1.
Base 2.
Collector 3.
Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 20 6 3 0.
5 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50ìA IC=1mA IE=50ìA VCB=30V VEB=5V 0.
2 180 290 25 Testconditons Min 40 20 6 0.
1 0.
1 0.
5 560 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC=2A, IB=0.
1A hFE fT Cob VCE=2V, IC=0.
1A VCE=2V, IE= -0.
5A, f=100MHz VCB=10V, IE=0A, f=1MHz hFE Classification Marking Rank hFE R 180 390 CF S 270 560 +0.
1 -0.
1 www.
kexin.
com.
cn 1 Datasheet pdf - http://www.
DataSheet4U.
net/ ...


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