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2SD2150

Jiangsu Changjiang Electronics
Part Number 2SD2150
Manufacturer Jiangsu Changjiang Electronics
Description NPN Transistor
Published Nov 18, 2011
Detailed Description www.DataSheet.co.kr JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2150 ...
Datasheet PDF File 2SD2150 PDF File

2SD2150
2SD2150


Overview
www.
DataSheet.
co.
kr JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-89 Plastic-Encapsulate Transistors 2SD2150 SOT-89 1.
BASE 2.
COLLECTOR 3.
EMITTER 1 2 3 TRANSISTOR NPN FEATURES Power dissipation : 0.
5 W Tamb=25 PCM Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) Test unless otherwise specified conditions MIN TYP MAX UNIT V V V Ic=50 A,IE=0 Ic=1mA,IB=0 IE=50 A,IC=0 VCB=30V,IE=0 VEB=5V,IC=0 VCE=2V,IC=0.
1A IC=2A,IB=100mA VCE=2V,IC=0.
5A ,f=100MHz VCB=10V,IE=0,f=1MHz 40 20 6 0.
1 0.
1 180 560 0.
5 290 25 A A V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking Q 120-270 CFQ R 180-390 CFR S 270-560 CFS Datasheet pdf - http://www.
DataSheet4U.
net/ ...


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