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RFHA1023

RF Micro Devices
Part Number RFHA1023
Manufacturer RF Micro Devices
Description 225W GaN WIDE-BAND PULSED POWER AMPLIFIER
Published Nov 5, 2011
Detailed Description www.DataSheet.co.kr RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ ...
Datasheet PDF File RFHA1023 PDF File

RFHA1023
RFHA1023

Overview
www.
DataSheet.
co.
kr RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.
2GHz to 1.
4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50 : Operation Integrated Matching Components for High Terminal Impedances 36V Operation Typical Performance: „ „ „ „ „ RF IN VGQ Pin 1 (CUT) GND BASE RF OUT VDQ Pin 2 Functional Block Diagram Output Pulsed Power: 225W Pulse Width: 1ms, Duty Cycle 10% Small Signal Gain: 15dB High Efficiency (55%) - 40°C to 85°C Operating Temperature Product Description The RFHA1023 is a 36V 225W high power discrete amplifier designed for L-Ba...


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