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1SS321

SEMTECH ELECTRONICS
Part Number 1SS321
Manufacturer SEMTECH ELECTRONICS
Description SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Published Nov 1, 2011
Detailed Description www.DataSheet.co.kr 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 ...
Datasheet PDF File 1SS321 PDF File

1SS321
1SS321


Overview
www.
DataSheet.
co.
kr 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Non-Repetitive Peak Forward Surge Current ( t = 10 ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Pd Tj Tstg Value 12 10 50 150 1 150 125 - 55 to + 125 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 50 mA Reverse Current at VR = 10 V Reverse Breakdown Voltage at IR = 10 µA Total Capacitance at VR = 0 , f = 1 MHz Symbol VF IR V(BR)R CT Min.
12 Max.
1 500 4.
5 Unit V nA V pF SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/12/2007 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr 1SS321 SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/12/2007 Datasheet pdf - http://www.
DataSheet4U.
net/ ...


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