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Part Number
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IXZ4DF18N50 |
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Manufacturer
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IXYS Corporation |
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Description
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RF Power MOSFET&DRIVER |
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Datasheet
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 IXZ4DF18N50 PDF File
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Overview
www.
DataSheet.
co.
kr
IXZ4DF18N50
RF Power MOSFET & DRIVER
Driver / MOSFET Combination DEIC-515 Driver combined with IXZ318N50 MOSFET Gate driver matched to MOSFET
Features • Isolated substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced Z-MOS process • Low Rds(ON) • Very low insertion inductance(<2nH) • No beryllium oxide (BeO) or other hazardous materials • Built using the advantages and compatibility of CMOS and IXYS HDMOS™ processes • Latch-up protected • Low quiescent supply current Applications Advantages • Optimized for RF and high speed • Easy to mount—no insulators needed • High power density • Single package reduces size and heat sink area • Class D or E Switching Amplifier • Multi MHz Switch Mode Power Supplies (SMPS) 500 Volts 19 A 0.
29 Ohms
Description The IXZ4DF18N50 is a CMOS high speed high current gate driver and ZMOS MOSFET combination specifically designed Class D and E HF RF applications at up to 40MHz, as well as other applications.
The IXZ4DF18N50 in pulse mode can provide 95A of peak current while producing voltage rise and fall times of less than 4ns, and minimum pulse widths of 8ns.
The input of the driver is fully immune to latch up over the entire operating range.
Designed with small internal delays, the IXZ4DF18N50 is suitable for higher power operation where combiners are used.
Its features and wide safety margin in operating voltage and power make the IXZ4DF18N50 unmatched in performance and value.
The IXZ4DF18N50 is packaged in DEI's low inductance RF package incorporating DEI's RF layout techniques to minimize stray lead inductances for optimum switching performance.
The IXZ4DF18N50 is a surfacemountable device.
Figure 1.
Functional Diagram
Datasheet pdf - http://www.
DataSheet4U.
net/
www.
DataSheet.
co.
kr
IXZ4DF18N50
RF Power MOSFET & DRIVER
Device Specifications
Parameter
Maximum Junction Temperature Operating Temperature Range Weight
Value 150°...
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