RF Power MOSFET&DRIVER - IXYS Corporation
Description
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IXZ4DF12N100
RF Power MOSFET & DRIVER
Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET
Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced Z-MOS process • Low RDS(on) • Very low insertion inductance (<2nH) • No beryllium oxide (BeO) or other hazardous materials • Built using the advantages and compatibility of CMOS and IXYS HDMOS™ processes • Latch-Up Protected • Low Quiescent Supply Current Advantages • Optimized for RF and high speed • Easy to mount—no insulators needed • High power density • Single package reduces size and heat sink area 1000 Volts 12 A 0.
7 Ohms
Applications
• Class D or E Switching Amplifier • Multi MHz Switch Mode Power Supplies (SMPS)
Description
The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically designed Class D, E, HF, RF applications at up to 40MHz, as well as other applications.
The IXZ4DF12N100 in pulse mode can provide 72A of peak current while producing voltage rise and fall times of less than 5ns, and minimum pulse widths of 8ns.
The input of the driver is fully immune to latch up over the entire operating range.
Designed with small internal delays, the IXZ4DF12N100 is suitable for higher power operation where combiners are used.
Its features and wide safety margin in operating voltage and power make the IXZ4DF12N100 unmatched in performance and value.
The IXZ4DF12N100 is packaged in DEIs low inductance RF package incorporating DEI's RF layout techniques to minimize stray lead inductances for optimum switching performance.
The IXZ4DF12N100 is a surfacemountable device.
Figure 1.
Functional Diagram
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IXZ4DF12N100
RF Power MOSFET & DRIVER Device Specifications
Parameter
Maximum Junction Temperature Operating Temperature Range Weight...
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