INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier
Description
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DataSheet.
co.
kr
PD - 94913
IRGIB10B60KD1PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C • Lead-Free
C
VCES = 600V IC = 10A, TC=100°C
G E
tsc > 10µs, TJ=150°C
n-channel
VCE(on) typ.
= 1.
7V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VISOL VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.
Fig.
C.
T.
5) Clamped Inductive Load current
TO-220 Full-Pak
Max.
600 16 10 A 32 32 16 10 32 2500 ±20 44 22 -55 to +175 °C 300 (0.
063 in.
(1.
6mm) from case) 10 lbf.
in (1.
1N.
m) W V
Units
V
c
Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case, t = 1 min Gate-to-Emitter Voltage Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Parameter
RθJC RθJC RθCS RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
––– ––– ––– ––– –––
Typ.
––– ––– 0.
50 ––– 2.
0
Max.
3.
4 5.
3 ––– 62 –––
Units
°C/W
g
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12/29/03
Datasheet pdf - http://www.
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DataSheet.
co.
kr
IRGIB10B60KD1PbF Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min.
Typ.
Max.
Units
— 0.
99 1.
70 2.
05 2.
06 4.
5 -10 5.
0 1.
0 90 150...
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