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2SB1457

Toshiba Semiconductor
Part Number 2SB1457
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington) 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Sw...
Datasheet PDF File 2SB1457 PDF File

2SB1457
2SB1457

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington) 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications 2SB1457 Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.
5 V (max) (IC = −1 A, IB = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC (DC) IC (Pulse) IB PC Tj Tstg −100 −100 −8 −2 −3 −0.
5 900 150 −55 to 150 V V V...


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