2SK3316 - Toshiba Semiconductor
Description
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2SK3316
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3316
Switching Regulator Applications
z Fast reverse recovery time z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : trr = 60 ns (typ.
) : RDS (ON) = 1.
6 Ω (typ.
) : |Yfs| = 3.
8 S (typ.
) Unit: mm
z Built-in high-speed free-wheeling diode
: IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.
5 150 −55~150 Unit V V V A A W mJ A mJ °C °C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
— SC-67 2-10R1B
Weight: 1.
9 g (typ.
)
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in
temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 3.
57 62.
5 Unit °C / W °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.
2 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum chan...
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