DatasheetsPDF.com

2SD1709

Part Number	2SD1709
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Sep 18, 2011
Detailed Description	isc Silicon NPN Power Transistor 2SD1709 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Spee...
Datasheet	2SD1709 PDF File

Overview

isc Silicon NPN Power Transistor 2SD1709 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 100 W 150 ℃ Tstg Storage Temperature Range ...

Similar Datasheet

2SD1700 NPN SILICON TRANSISTOR - NEC
2SD1701 NPN SILICON TRANSISTOR - NEC
2SD1702 NPN Transistor - NEC
2SD1705 Silicon NPN Transistor - Panasonic Semiconductor
2SD1705 NPN Transistor - INCHANGE
2SD1706 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1707 Silicon NPN Transistor - Panasonic Semiconductor
2SD1707 NPN Transistor - INCHANGE
2SD1709 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1710 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)